MSA-0270 cascadable silicon bipolar mmic amplifer data sheet features ? cascadable 50 gain block ? 3 db bandwidth: dc to 2.8 ghz ? 12.0 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? hermetic gold-ceramic microstrip package 70 mil package description the MSA-0270 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a hermetic, high reliability package. this mmic is designed for use as a general purpose 50 gain block. typical applications include narrow and broad band if and rf amplifers in industrial and military applications. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias fexibility. typical biasing confguration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3
MSA-0270 absolute maximum ratings parameter absolute maximum [1] device current 60 ma power dissipation [,3] 35 mw rf input power +13 dbm junction temperature 00c storage temperature C65 to 00c thermal resistance [2,4] : jc = 10c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25c. 3. derate at 8.3 mw/c for t c > 161c. 4. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 1 | ) f = 0.1 ghz db 11.5 1.5 13.5 ? g p gain flatness f = 0.1 to 1.8 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz .8 input vswr f = 0.1 to 3.0 ghz 1.4:1 output vswr f = 0.1 to 3.0 ghz 1.4:1 nf 50 noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 4.5 ip 3 third order intercept point f = 1.0 ghz dbm 17.0 t d group delay f = 1.0 ghz psec 15 v d device voltage v 4.5 5.0 5.5 dv/dt device voltage temperature coefcient mv/c C8.0 note: 1. the recommended operating current range for this device is 18 to 40 ma. typical performance as a function of current is on the following page. electrical specifcations [1] , t a = 25c symbol parameters and test conditions: i d = 25 ma, z o = 50 units min. typ. max. vswr
3 MSA-0270 typical scattering parameters (z o = 50 , t a = 5c, i d = 5 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .11 179 1.6 4.6 176 C18.4 .10 1 .1 C8 0. .11 174 1.6 4.4 171 C18.6 .117 3 .1 C15 0.4 .10 169 1.5 4.1 16 C18.4 .10 4 .13 C30 0.6 .09 165 1.4 4.17 154 C18. .13 5 .14 C44 0.8 .08 161 1.3 4.11 146 C18. .13 7 .14 C55 1.0 .06 161 1. 4.05 137 C18.0 .16 9 .15 C64 1.5 .0 C150 11.7 3.85 116 C17. .138 11 .16 C84 .0 .06 C110 11.1 3.57 96 C16.3 .153 11 .16 C10 .5 .11 C11 10.3 3.7 8 C15.7 .165 14 .14 C106 3.0 .17 C134 9.3 .9 65 C15. .174 1 .13 C114 3.5 . C147 8. .56 48 C14.7 .185 6 .15 C111 4.0 .6 156 7.0 .3 33 C14.3 .19 3 .19 C107 5.0 .8 179 4.7 1.7 8 C14.0 .199 C6 .7 C107 6.0 .30 143 3.0 1.41 C13 C13.8 .04 C14 .9 C119 s 11 s 21 s 12 s 22 typical performance, t a = 25c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25c, i d = 25 ma. i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 0 2 4 6 8 10 12 14 g p (db) 15 25 30 40 35 20 gain flat to dc 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 2 4 6 8 10 12 p 1 db (dbm) i d = 40 ma i d = 18 ma i d = 25 ma v d (v) figure 2. device current vs. voltage. 0 10 20 30 40 i d (ma) 0 2 3 4 5 6 1 t c = +125c t c = +25c t c = ?55c 2 3 4 5 6 7 8 11 12 13 7 ?55 ?25 +25 +85 +125 8 6 5 4 3 2 p 1 db (dbm) nf (db) g p (db) temperature (c) figure 4. output power at 1 db gain compression, nf and power gain vs. mounting surface temperature, f = 1.0 ghz, i d = 25 ma. nf g p p 1 db 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 18 ma i d = 25 ma i d = 40 ma
70 mil package dimensions ordering information part number no. of devices comments msa-070 100 bulk for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 008 avago technologies, limited. all rights reserved. obsoletes 5989-766en av0 -1 3en may 5, 008 1 3 4 2 ground ground rf output and bias rf input .020 .508 .070 1.78 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05
|
